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High performance operation of silicon bipolar transistors at liquid nitrogen temperature
Home
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High performance operation of silicon bipolar transistors at liquid nitrogen temperature
High performance operation of silicon bipolar transistors at liquid nitrogen temperature
JS
J.M.C. Stork
J.M.C. Stork
DH
D.L. Harame
D.L. Harame
BM
B.S. Meyerson
B.S. Meyerson
TN
T.N. Nguyen
T.N. Nguyen
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1 January 1987
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1987.191443
Abstract
No abstract available
Keywords
RING OSCILLATOR
TEMPERATURE
DOPING
KELVIN
BIPOLAR TRANSISTORS
LIQUID NITROGEN
BIPOLAR TRANSISTOR
DEGRADATION
TUNNELING
PHOTONIC BAND GAP
NITROGEN
SILICON
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