High-efficiency, high-temperature mid-infrared (λ≥ 4 µm)InAsSb/GaSb lasers
- 10 November 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (23) , 1944-1945
- https://doi.org/10.1049/el:19941301
Abstract
With 2 µm pumping, a 4 µm InAsSb/GaSb double heterostructure laser operated at 86.5 K yielded 11% slope power efficiency and 16 mW CW power. Pulsed operation up to 211 K was observed. The threshold and efficiency were studied as functions of temperature and pump wavelength.Keywords
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