Structural characterization by transmission electron microscopy of silicon grown over submicrometer-period gratings of deposited tungsten
- 15 January 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (2) , 223-225
- https://doi.org/10.1063/1.94717
Abstract
The Si overgrowth of deposited W gratings, which is the most critical step in the fabrication of the overgrown version of the Si permeable base transistor, has been characterized by transmission electron microscopy. At the high temperatures (>1000 °C) normally required for the growth of single‐crystal Si, the W grating reacts with both the surrounding and depositing Si to form WSi2. Despite this conversion, conventional vapor phase epitaxial techniques can be used to overgrow the grating with a single‐crystal Si layer. The overgrown layer contains a low density of observed crystal defects. The fabrication procedure used for successful overgrowth and the quality of the overgrown layer are discussed.Keywords
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