Analysis of electrical and optical properties of insulating film–GaAs interfaces using MESFET-type structures

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Abstract
The electrical and optical measurements of low‐frequency characteristics for the GaAs MESFET structures with long gate width were found to be an effective tool for the studies of interface states between insulating films and GaAs. The surface leakage current through the interface layer plays an important role in the frequency dependence of the transconductance and the gate admittance. An equivalent circuit which quantitatively explains the experimental results is proposed. Using the MESFET structure overcoated with insulating films (SiO2, Si3N4, and AlN), electrical and optical properties of the interface between these insulating films and GaAs were studied and it was found that these films have characteristic activation energies of 0.62, 0.44, and 0.27 eV, respectively.

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