Molecular dynamics simulation of the damage formed in silicon at energies near threshold
- 1 June 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 33 (1) , 776-779
- https://doi.org/10.1016/0168-583x(88)90680-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Simulation of amorphization in silicon latticeRadiation Effects, 1975
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Dielectric Screening Model for Lattice Vibrations of Diamond-Structure CrystalsPhysical Review B, 1969
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966