Gain, polarisation sensitivity and saturation power of 1.5 μm near-travelling-wave semiconductor laser amplifier

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Abstract
Gain, saturation and polarisation characteristics of a near-travelling-wave 1.5,μm BH semiconductor laser amplifier are reported. An internal cavity peak TE gain of 26.8 ± 0.5 dB with a gain ripple of 2.9 ± 0.1 dB, and TE saturation output power of 3.5±1.5dB at 22.2±0.5dB small-signal gain have been achieved.