Highly reliable and mode-stabilized operation in v-channeled substrate inner stripe lasers on p-GaAs substrate emitting in the visible wavelength region

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Abstract
Highly reliable and mode‐stabilized operation is realized in v‐channeled substrate inner stripe (VSIS) lasers emitting in the visible wavelength region. The VSIS lasers with emission wavelengths of 725–790 nm have low threshold currents of 40±5 mA and reproducibly provide fundamental transverse and single longitudinal mode operation up to 20 mW/facet cw. These performances result from the transverse‐mode stabilization by a built‐in optical waveguide which is self‐aligned with an internal current confining channel. Accelerated lifetests and the statistical characterization of reliability were performed on VSIS lasers emitting at 780 nm. The median lifetimes are estimated to be 1.1×106 h for 5 mW/facet, 4.8×104 h for 10 mW/facet, and 1.3×104 h for 15 mW/facet operations at 25 °C. In addition, almost no degradation in modal characteristics has been observed in the devices operated at 5 mW/facet at 50 °C for 4000 h, up to the present. Photoluminescence study was performed in order to clarify the effects of the Te‐doped cladding layer on the quality of the active layer.