Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
- 19 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (20) , 2708-2710
- https://doi.org/10.1063/1.118999
Abstract
Experimental evidence is presented showing that the thickness dependence observed for charge-to-breakdown measurements of very thin oxide layers in metal-oxide-semiconductor structures is correlated with that for the reduction in total generated microscopic defects necessary to induce destruction. These results are related to a percolation model for the formation of paths connecting some of these defects from the cathode to the anode at the time of breakdown.Keywords
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