Isothermal current instability and local breakdown in GaAs FET
- 18 June 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (13) , 1265-1267
- https://doi.org/10.1049/el:19920801
Abstract
Results of experimental observations of the S-shaped I-V characteristic and current avalanche injection isothermal filaments in GaAs FETs is presented. Apparatus and methodical provision for the nondestructive control of the isothermal current instability and irreversible breakdown of the FET are proposedKeywords
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