Electrical Properties of Indium- Tin-Oxide Single Crystals
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A) , L12-14
- https://doi.org/10.1143/jjap.23.l12
Abstract
Indium-tin-oxide single crystals with 0–9 atomic% of Sn/In are produced by flux method, and their electrical properties are measured. At about 2 atomic% of Sn/In, the resistivity is 2×10-4 Ω-cm and the electron concentration is 3×1020/cm3 at room temperature. Further increase of Sn/In ratio does not change the electrical properties. The electron concentration is about 1/2–1/10 of the numbers of Sn atoms in the crystals. The value of electron mobility is about 100 cm2/V.s and independent with the atomic ratio of Sn/In. This value is about 5 times larger than the calculated one assuming the ionized impurity scattering in degenerate semiconductor.Keywords
This publication has 7 references indexed in Scilit:
- Thin metallic oxides as transparent conductorsThin Solid Films, 1982
- The operation of the semiconductor-insulator-semiconductor solar cell: ExperimentJournal of Applied Physics, 1979
- The solubilities of Sn in In2O3 and of In in SnO2 crystals grown from Sn—In meltsJournal of Crystal Growth, 1976
- Optical and electrical properties of doped In2O3 filmsPhysica Status Solidi (a), 1975
- Electrical Conductivity and Growth of Single-Crystal Indium SesquioxideJournal of Applied Physics, 1964
- Electrical Properties of Single Crystals of Indium OxideJournal of Applied Physics, 1962
- Über die herstellung von zinkoxydeinkri-stallen mit definierten zusätzenJournal of Physics and Chemistry of Solids, 1958