Mercury diffusion in Hg1−xCdxTe
- 1 June 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (6) , 419-424
- https://doi.org/10.1007/bf02657821
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Grain-boundary diffusion of mercury in p-type (Hg, Cd)TePhysica Status Solidi (a), 1989
- Bridgman growth of Cdx Hg1-xTe using acrtJournal of Electronic Materials, 1986
- The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg,Cd)TeJournal of Vacuum Science & Technology A, 1985
- Observation of Hg diffusion in CdTe by means of 40-MeV O5+ ion backscatteringApplied Physics Letters, 1984
- A mathematical analysis of diffusion in dislocations. III. Diffusion in a dislocation array with diffusion zone overlapJournal of Physics C: Solid State Physics, 1983
- Energy gap versus alloy composition and temperature in Hg1−xCdxTeJournal of Applied Physics, 1982
- Diffusion in CdxHg1-xTe and related materialsJournal of Crystal Growth, 1982
- A mathematical analysis of diffusion in dislocations. I. Application to concentration 'tails'Journal of Physics C: Solid State Physics, 1981