Interface structure and lattice mismatch of epitaxial CoSi2 on Si(111)

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Abstract
We have used the x‐ray standing‐wave technique and bulk x‐ray diffraction to investigate the structural properties of thin CoSi2 layers grown epitaxially on Si(111). The perpendicular lattice mismatch with respect to the Si substrate was found to be −0.0152±0.0003 and −0.016±0.001 for 6‐nm‐thick and 16‐nm‐thick layers, respectively. The distance between Si(111) and the first Co layer was measured to be (0.288±0.005) nm and is thus stretched by (0.014±0.005) nm compared with a value determined by Si‐like bulk bond length. The Co atoms are attached to the Si(111) dangling bonds in agreement with the model of fivefold coordinated metal atoms at the interface.