Gunn effects in In x Ga 1−x Sb (0 ≤ x ≤ 0.16)
- 21 March 1974
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 10 (6) , 61-62
- https://doi.org/10.1049/el:19740047
Abstract
Gunn effects in InxGa1−xSb (0 ≤ x ≤ 0.16) have been observed. To observe the Gunn effect, a condition nL/nΓ ≤ 0.1 or, equivalently, ΔELΓ ≥ 6.4kT should be satisfied in the crystals. The threshold fields for the Gunn effect in the crystals were in the range of 0.6−1.0 kV/cm.Keywords
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