Double Raman resonances induced by a magnetic field in GaAs-AlAs multiple quantum wells
- 15 July 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (3) , 1113-1117
- https://doi.org/10.1103/physrevb.44.1113
Abstract
A strong enhancement in the intensity of the Raman resonance profile has been observed in GaAs-AlAs multiple quantum wells, when the energies of different transitions are tuned by an external magnetic field. This finding is interpreted as double Raman resonances corresponding to some excited states and the ground state of the light-hole exciton as incoming and outgoing channels, respectively. Our results are best understood by assuming an exciton-phonon scattering mechanism instead of the usual free-electron–phonon interaction.Keywords
This publication has 12 references indexed in Scilit:
- Term spectrum of magnetoexcitons in quasi-two-dimensional systemsPhysical Review B, 1990
- Resonant magneto-Raman scattering in GaAsPhysical Review B, 1990
- Phonons in GaAs-AlxGa1−xAs superlatticesJournal of Luminescence, 1989
- Doubly resonant raman scattering induced by an electric fieldPhysical Review B, 1988
- Resonance Raman scattering in GaAs-As superlattices: Impurity-induced Fröhlich-interaction scatteringPhysical Review B, 1987
- Doubly resonant LO-phonon Raman scattering observed with GaAs-As quantum wellsPhysical Review B, 1987
- Stress-induced doubly resonant Raman scattering in GaAsPhysical Review Letters, 1986
- Doubly resonant LO-phonon Raman scattering via the deformation potential with a single quantum wellPhysical Review B, 1986
- Raman Scattering Resonant with Quasi-Two-Dimensional Excitons in Semiconductor Quantum WellsPhysical Review Letters, 1983
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974