The metal-semiconductor contact: an old device with a new future
- 1 March 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Spectrum
- Vol. 7 (3) , 83-89
- https://doi.org/10.1109/mspec.1970.5213256
Abstract
Advances in process technology are making possible the fabrication of Schottky barriers with reliable, ideal electrical characteristics. With these advances, one can anticipate a rapid increase in the utilization of Schottky barriers, not only as discrete devices but also as a new component in integrated circuits. This article presents a unified picture that quantitatively characterizes both the Schottky barrier and ohmic contacts on silicon. Fabrication techniques and various applications are also discussed.Keywords
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