Technical Method of Determination of the Interface Trap Density
- 16 May 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 89 (1) , 383-388
- https://doi.org/10.1002/pssa.2210890140
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- A single-frequency approximation for interface-state density determinationPublished by Elsevier ,2002
- Simple Method for Determination of the Interface Trap Density at the Midgap in MOS StructuresPhysica Status Solidi (a), 1982
- La méthode de détermination de la distribution de la concentration d'ètats d'interface dans la structure mosSolid State Communications, 1980
- Characterization of Surface States at the Si-SiO2 InterfacePublished by Springer Nature ,1979
- Evidence for multiphonon emission from interface states in MOS structuresSolid State Communications, 1978
- Interface states on semiconductor/insulator surfacesC R C Critical Reviews in Solid State Sciences, 1976
- A simplified technique for measuring fast surface statesSolid-State Electronics, 1975
- Characterization of Surface States at the Si-SiO[sub 2] Interface Using the Quasi-Static TechniqueJournal of the Electrochemical Society, 1971
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Semiconductor Surface VaractorBell System Technical Journal, 1962