Crystal growth of GaP doped with nitrogen under high nitrogen pressure
- 30 September 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (3) , 711-716
- https://doi.org/10.1016/0022-0248(85)90225-8
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- High pressure thermodynamics of GaNJournal of Crystal Growth, 1984
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984
- High pressure vapor growth of GaNJournal of Crystal Growth, 1982
- Nitrogen doping profiles in gallium phosphide grown by liquid phase epitaxyJournal of Crystal Growth, 1979
- On the kinetics of nitrogen incorporation in GaP LPE layers using NH3 vapour dopingJournal of Crystal Growth, 1975
- High pressure solution growth of GaNJournal of Crystal Growth, 1975
- Heteroepitaxial Thermal Gradient Solution Growth of GaNJournal of the Electrochemical Society, 1972
- Calculation of the Solubility and Solid-Gas Distribution Coefficient of N in GaPJournal of the Electrochemical Society, 1972
- EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GaP p-n JUNCTIONSApplied Physics Letters, 1968
- Green Electroluminescence from Gallium Phosphide Diodes near Room TemperatureJournal of Applied Physics, 1967