Efficiency enhancement in quantum well lasers via tailored doping profiles
- 13 June 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (24) , 2017-2018
- https://doi.org/10.1063/1.99568
Abstract
Reduced doping concentrations proximate to the active region in single quantum well (Al)GaAs lasers have been used to improve the external quantum efficiency. A substantial enhancement is observed in a structure in which, by design, the mode overlap with the doped confining regions is large. For a structure in which the mode is tightly confined, doping modifications have no measurable effect.Keywords
This publication has 3 references indexed in Scilit:
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- GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAsJournal of Applied Physics, 1972