Strain-induced lateral confinement of excitons in GaAs/AlGaAs quantum well by chemical dry etching
- 1 November 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (6) , 3498-3501
- https://doi.org/10.1116/1.585831
Abstract
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