Optically Pumped GaN-AlGaN Double-Heterostructure Lasers Grown by ECR-GSMBE and HVPE
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Spontaneous and stimulated emission from photopumped GaN grown on SiCApplied Physics Letters, 1995
- Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphireApplied Physics Letters, 1995
- The Role of Impurities in Hydride Vapor Phase Epitaxially Grown Gallium NitrideMRS Proceedings, 1995
- Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperatureApplied Physics Letters, 1994
- Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configurationApplied Physics Letters, 1994
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double HeterostructureJapanese Journal of Applied Physics, 1993
- A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxyApplied Physics Letters, 1993
- Conductivity control of GaN and fabrication of UV/blue GaN light emitting devicesPhysica B: Condensed Matter, 1993
- Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer LayerJapanese Journal of Applied Physics, 1990
- Refractive index of GaNPhysica Status Solidi (a), 1971