Cryogenic field-effect transistor with single electronic charge sensitivity
- 31 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (5) , 631-633
- https://doi.org/10.1063/1.111072
Abstract
We have fabricated matched pairs of cryogenic field-effect transistors with input charge sensitivity qn=0.01 e/√Hz at T=1.3 K, low input capacitance 0.4 pF, and extremely high input resistance in excess of 1015 Ω. Low leakage permits dc charge-coupled operation for times up to ∼103 s. The channel noise is characterized by a flat spectrum at high frequencies, and 1/f noise below a corner frequency fc<1 kHz. These devices can resolve charge differences as small as qn√fc=0.4e.Keywords
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