A new quantum mechanical channel mobility model for Si MOSFET's
- 1 October 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (10) , 499-502
- https://doi.org/10.1109/EDL.1987.26707
Abstract
A new model is presented for the transverse field-dependent mobility in MOSFET's. It is based on the diffuse scattering of electrons at the Si-SiO2interface in the narrow inversion layer, due to the uncertainty principle related momentum, of the electrons in induced quantum levels. Our calculations for unstressed material yield µ ≈ F-αwith α ≈ 0.67 at high fields. For stressed material α falls to less than 0.2. Combining this channel mobility with bulk phonon scattering gives an excellent fit to a large body of data. Process-induced stress may account for the wide range in µ and α reported in the literature.Keywords
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