0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 939-941
- https://doi.org/10.1109/iedm.1990.237087
Abstract
It was found that LICTs are very effective for providing low threshold voltages with good turn-offs in 0.1 mu m CMOS devices. Attention is given to device fabrication criteria, key process technologies used, and the features achieved using LICTs.<>Keywords
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