Deep hole traps in VPE p -type InP

17 September 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (19) , 685-686
https://doi.org/10.1049/el:19810479

Abstract

Deep hole traps were investigated in vapour phase epitaxial p-type InP by transient capacitance spectroscopy. A total of five hole traps were observed with activation energies of 0.09, 0.22, 0.29, 0.41 and 0.50 eV in Al-InP Schottky barriers and p-n⁺ junctions. Trap concentrations ranged from 10¹³ to 10¹⁴ cm⁻³.

Keywords

III-V SEMICONDUCTOR
AL-INP SCHOTTKY BARRIERS
DEEP HOLE TRAPS
VPE
P-N+ JUNCTIONS
TRANSIENT CAPACITANCE SPECTROSCOPY
ACTIVATION ENERGY
INP

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