Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy
- 1 April 2002
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 389-393, 311-314
- https://doi.org/10.4028/www.scientific.net/msf.389-393.311
Abstract
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