Improved charge control and the frequency performance in InAs/AlSb HFET's
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (11) , 2114
- https://doi.org/10.1109/16.239786
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistorIEEE Electron Device Letters, 1993
- Interface roughness scattering in InAs/AlSb quantum wellsApplied Physics Letters, 1992