Proposed dislocation theory of burst noise in planar transistors
- 19 March 1970
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 6 (6) , 176-178
- https://doi.org/10.1049/el:19700124
Abstract
Several experiments show that burst noise is an intermittent large-scale recombination; its rate of occurrence depends on mechanical stresses. Moving dislocations acting as large-scale recombination centres explain the burst-noise characteristics. From experiment, the cause of dislocation motion seems to be momentum transfer from the emitter current.Keywords
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