Optically frequency modulated GaAs MESFET oscillator
- 26 November 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (24) , 901-902
- https://doi.org/10.1049/el:19810628
Abstract
A GaAs MESFET X-band oscillator has been frequency modulated by an amplitude modulated optical signal injected on the active device. A modulation index of 0.5 corresponding to MSK modulation has been achieved at 2 Mbit/s without parasitic amplitude modulation. It is shown that the FM modulation index variation against frequency is directly related to the drain current response of the FET considered as a photodetector. This responsivity has been measured to decrease above 5 MHz, which limits the oscillator FM capability.Keywords
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