Dose dependence of epitaxial regrowth of Se-implanted GaAs
- 15 March 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 502-504
- https://doi.org/10.1063/1.93157
Abstract
High resolution Rutherford backscattering and channeling measurements have been used to investigate the annealing behavior of Se-implanted GaAs layers. The dose dependence of the as-implanted damage and residual disorder after annealing at 400 °C has been examined. Results show that the residual disorder increases rather sharply at a dose just above that required to amorphize the surface layer and then reaches a saturation level. Once the saturation level is reached, the residual disorder is dependent almost linearly on the thickness of the amorphous layer.Keywords
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