Photochemical Hole Burning in Highly Doped TPP/PMMA Systems. Energy Migration and Stabilization of Burnt Holes for Subsequent Hole-Burnings
- 1 January 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (S3)
- https://doi.org/10.7567/jjaps.28s3.251
Abstract
Photochemical hole-burning experiments were performed on highly doped TPP/PMMA systems. Kinetics of the photophysical processes which compete with the PHB photochemistry, including the interguest energy migration, was analyzed. Reduction of the hole-filling efficiency accompanied by subsequent hole-burning was observed when ZnTPP was also incorporated in the system. Applicability of highly doped host-guest systems to the practical PHB optical memory was discussed.Keywords
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