Laser annealing of ion-implanted semiconductors
- 1 January 1979
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 50 (1) , 245-258
- https://doi.org/10.1063/1.31667
Abstract
The mechanisms and applications of laser annealing are reviewed. The power thresholds and supersaturation of dopants are demonstrated by electrical measurements in Si and GaAs. Arsenic, Sb, Zn and Cr depth profiles, following pulsed laser irradiation, are discussed in terms of melting or defect enhanced diffusion in the solid state.Keywords
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