Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
- 1 February 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (2A) , L121-123
- https://doi.org/10.1143/jjap.25.l121
Abstract
Advanced polysilicon SFT's (Super-thin-Film Transistor) were fabricated on quartz at a low temperature process below 610°C. Using the technique of Si+ ion implanted amorphization and subsequent solid phase growth and making a super-thin-film structure, superior electrical characteristics such as high electron mobility of 60 cm2/(V·s) were obtained. The oscillation of a 19 stage ring oscillator with a channel length of 8.4 µm was observed. Propagation delay time of 8.13 ns/stage was attained. The device is expected to be applied to monolithic liquid-crystal-display on low temperature glass and three dimensional LSI technology.Keywords
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