Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

1 December 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (12) , 1366-1368
https://doi.org/10.1109/t-ed.1977.19017

Abstract

A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

Keywords

SCANNING ELECTRON MICROSCOPE
DEPTH MEASUREMENT
ELECTRON BEAM
SCANNING ELECTRON MICROSCOPY
ELECTRON MICROSCOPE
INTEGRATED CIRCUIT
NONDESTRUCTIVE TESTING
ION IMPLANTATION
ELECTRON MICROSCOPES
FINITE DIFFERENCE METHODS
GOLD
INTEGRATED CIRCUITS

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