Mobility and carrier concentration profiles in ion-implanted layers on doped and undoped semi-insulating GaAs substrates at 299 and 105 K

1 February 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 29 (2) , 205-211
https://doi.org/10.1109/T-ED.1982.20685

Abstract

This paper presents results of experimental determination of free carrier concentration (n) and mobility (µ) profiles in silicon ion-implanted layers on different types of semi-insulating GaAs substrates at room and liquid-nitrogen temperatures. The measurement utilizes long-channel FET test structures and an RF transformer ratio-arm bridge. The effective background compensating acceptor concentration profiles have also been determined by comparing the experimental µ versus n plots with the published theoretical results for different compensation ratio values. The results indicate that boron nitride crucible grown GaAs substrates can provide high mobility and low compensating background acceptor concentration profiles.

Keywords

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