Relaxation of ion implant damage in silicon wafers at room temperature measured by thermal waves and double implant sheet resistance
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1-4) , 554-558
- https://doi.org/10.1016/0168-583x(87)90902-5
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Ion implant monitoring with thermal wave technologyApplied Physics Letters, 1985
- Structural effects of heating gold-based contacts to gallium phosphideSolid-State Electronics, 1984