The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 647-650
- https://doi.org/10.1016/0022-0248(91)91057-h
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988
- Phase-locked RHEED oscillations during MBE growth of GaAs and AlxGa1−xAsJournal of Crystal Growth, 1987
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984