Cascade four-wave mixing in semiconductor lasers

Abstract
Highly efficient cascade frequency mixing signals are generated in a nearly degenerate intracavity four‐wave mixing experiment in a GaAs/(GaAl)As semiconductor laser. This method allows a consistent quantitative determination of the third‐order nonlinear optical susceptibility within the gain bandwidth of a semiconductor laser. The dependence of this susceptibility on light intensity reveals the contribution of the free‐carrier plasma.