TCAD for bipolar process development: a user's perspective
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The author reviews the use of public domain TCAD tools (SUPREM and PISCES) for advanced bipolar process development. The simulators are utilized for device design and optimization, sensitivity analysis, and AC and DC parameter extraction. The various bipolar parameters that can be obtained from simulation are discussed. PISCES has been enhanced to model Si/sub 1-x/Ge/sub x/ heterojunction bipolar device structures. Some preliminary simulations of SiGe structures are presented.Keywords
This publication has 25 references indexed in Scilit:
- Technology and physics of polysilicon emittersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Modeling advanced bipolar devices for high performance applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A unified mobility model for device simulationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Hybrid simulation and sensitivity analysis for advanced bipolar device design and process developmentPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsIEEE Electron Device Letters, 1991
- Minority-carrier transport parameters in degenerate n-type siliconIEEE Electron Device Letters, 1990
- Collector signal delay in the presence of velocity overshootIEEE Electron Device Letters, 1990
- Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- A comprehensive analytical and numerical model of polysilicon emitter contacts in bipolar transistorsIEEE Transactions on Electron Devices, 1984
- Current gain in polysilicon emitter transistorsIEEE Transactions on Electron Devices, 1983