A low-power and high-speed submicron buried-channel MOSFET fabricated on the buried oxide
- 1 August 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (8) , 1331-1332
- https://doi.org/10.1109/t-ed.1982.20876
Abstract
Submicrometer buried-channel MOSFET's isolated by a buried oxide layer formed by oxygen ion-implantation technology were fabricated and their switching performances were evaluated. An n-channel E/D MOS ring oscillator with 0.5-µm channel devices has achieved a minimum delay time of 139 ps at 3.5-v drain voltage at room temperature and 78.4 ps at 7-V drain voltage at 77 K.Keywords
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