Electron velocity saturation in quantized silicon carbide inversion layers

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Abstract
Results of electron mobility calculations at room temperature in quantized cubic silicon carbide (β-SiC) inversion layers are reported. A comparison with silicon mobility curves is provided. Drift velocities both at room and higher temperatures are calculated by Monte Carlo simulations including electron quantization and Coulomb scattering, in addition to phonon and surface roughness scattering. We have also observed that steady-state drift velocity curves show a maximum that decreases as the transverse electric field increases, due to the greater importance of intervalley scattering with respect to polar phonon scattering.

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