Thermal stability of magneto-optic quadrilayers

Abstract
The thermal stability of sputtered TbFeCo thin films in magneto-optic quadrilayer structures containing Si3N4, SiO, and SiO2 dielectrics has been examined. The observed changes in coercivity upon annealing are attributed to two parallel mechanisms: structural relaxation in the amorphous magnetic alloy and preferential oxidation of Tb at the TbFeCo/SiO and TbFeCo/SiO2 interfaces. Kinetic modeling has revealed that a spectrum of activation energies is required to explain the relaxation data, whereas a single activation energy of 1.65 eV describes the oxidation process.