Field-effect phenomena in hydrogenated amorphous silicon photoreceptors
- 15 April 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8) , 3197-3198
- https://doi.org/10.1063/1.333356
Abstract
The imaging properties of hydrogenated amorphous silicon (a-Si:H) photoreceptors overcoated with insulating passivation layers are discussed. Field-effect phenomena are shown to interfere with the electrophotographic imaging process in this device configuration. Since photoreceptors are majority carrier devices and a-Si:H is an extrinsic material, the field-effect phenomena can be counteracted by proper doping of the a-Si:H-insulator interface.This publication has 5 references indexed in Scilit:
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