Improved contacts to semi-insulating GaAs photoconductive switches using a graded layer of InGaAs
- 8 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (15) , 1534-1536
- https://doi.org/10.1063/1.103344
Abstract
High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1−xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.Keywords
This publication has 5 references indexed in Scilit:
- Nonalloyed and alloyed low-resistance ohmic contacts with good morphology for GaAs using a graded InGaAs cap layerJournal of Applied Physics, 1989
- Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxyJournal of Applied Physics, 1988
- IIIA-5 AlGaAs/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitterIEEE Transactions on Electron Devices, 1986
- Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded InxGa1-xAs LayersJapanese Journal of Applied Physics, 1986
- Ohmic contacts to n-GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxyJournal of Vacuum Science and Technology, 1981