Estimation of the Thickness of Ultrathin Silicon Nitride Films by X-Ray Photoelectron Spectroscopy
- 1 August 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (8R)
- https://doi.org/10.1143/jjap.32.3580
Abstract
The thickness and composition of ultrathin silicon nitride films which are deposited on Si substrates and on thin thermal oxide are estimated by means of X-ray photoelectron spectroscopy (XPS). With use of the peak decomposition technique and angle-resolved XPS (ARXPS), the distribution of the silicon nitride and oxide in the films is determined. Both the nitride and oxide thicknesses are evaluated. The thickness determined by XPS agrees with the thickness determined by cross-sectional transmission electron microscopy (TEM). This XPS method is valid for estimation of the thickness and composition of ultrathin silicon nitride films, and it has the advantages of accuracy over ellipsometry and convenience over TEM.Keywords
This publication has 7 references indexed in Scilit:
- Ultrathin silicon nitride films prepared by combining rapid thermal nitridation with low-pressure chemical vapor depositionApplied Physics Letters, 1991
- Growth of native oxide on a silicon surfaceJournal of Applied Physics, 1990
- Proposed formula for electron inelastic mean free paths based on calculations for 31 materialsSurface Science, 1987
- Angle‐resolved XPS studies of oxides at NbN, NbC, and Nb surfacesSurface and Interface Analysis, 1987
- Mean free path of photoelectrons in silicon and silicon oxidesPhysica Status Solidi (a), 1981
- Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on siliconJournal of Vacuum Science and Technology, 1975
- Instrumentation for surface studies: XPS angular distributionsJournal of Electron Spectroscopy and Related Phenomena, 1974