Growth of diamond films on si(100) with and without boron nitride buffer layer
- 1 February 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (2) , 141-149
- https://doi.org/10.1007/bf02653315
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Nucleation enhancement of diamond synthesized by combustion flame techniquesApplied Physics Letters, 1990
- Atomic structure of dislocations in silicon, germanium and diamondPhilosophical Magazine A, 1990
- Diamond synthesis using an oxygen-acetylene torchMaterials Letters, 1988
- On epitaxial growth of diamond films on (100) silicon substratesApplied Physics Letters, 1988
- Low-Pressure, Metastable Growth of Diamond and "Diamondlike" PhasesScience, 1988
- Diamond synthesis from methane-hydrogen-water mixed gas using a microwave plasmaJournal of Materials Science, 1988
- Growth of Thin Chemically Bonded Diamondlike Films by Ion Beam DepositionScience, 1988
- Synthesis of diamond by laser-induced chemical vapor depositionApplied Physics Letters, 1986
- Characterization of conducting diamond filmsVacuum, 1986
- Electron microscopic observation of diamond particles grown from the vapour phaseJournal of Materials Science, 1983