Advanced passive devices for enhanced integrated RF circuit performance

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 341-344
https://doi.org/10.1109/rfic.2002.1012063

Abstract

State of the art passive devices have been developed for optimum RF circuit performance. These devices include a hyperabrupt junction varactor with tunability (Cmax/Cmin) of 3.3, an accumulation mode MOS varactor, high capacitance nitride metal-insulator-metal capacitors, a BEOL TaN resistor and very high Q inductors with a peak Q of 28 at 3.5 GHz. VCO simulations using several of these elements show a significant reduction In VCO gain variation, phase noise, and power consumption.

Keywords

RADIO FREQUENCY
VARACTORS
VOLTAGE-CONTROLLED OSCILLATORS
CIRCUIT OPTIMIZATION
CAPACITANCE
MIM CAPACITORS
RESISTORS
INDUCTORS
CIRCUIT SIMULATION
PHASE NOISE

This publication has 1 reference indexed in Scilit:

Fully integrated low phase noise VCO design in SiGe BiCMOS technology
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002