Modeling mid-infrared continuous-wave silicon-based Raman lasers

Abstract
We present the first modeling results for the Stokes and anti-Stokes output of a mid-infrared continuous-wave silicon-based Raman laser. These emission characteristics are generated by the use of an iterative resonator model, the loss terms of which we adapted for the case of silicon-based Raman lasers operating in the mid-infrared spectral domain. These loss terms contain besides linear losses also the three-photon absorption losses that occur in this type of lasers. We discuss the behavior of this three-photon absorption mechanism and its influence on both the Stokes and anti-Stokes output. Finally, we compare these emission characteristics with the corresponding simulation results for a near-infrared silicon-based Raman laser in which linear losses, two-photon absorption losses and free carrier absorption losses occur.

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