Modeling mid-infrared continuous-wave silicon-based Raman lasers
- 8 February 2007
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 64550U-64550U-10
- https://doi.org/10.1117/12.698488
Abstract
We present the first modeling results for the Stokes and anti-Stokes output of a mid-infrared continuous-wave silicon-based Raman laser. These emission characteristics are generated by the use of an iterative resonator model, the loss terms of which we adapted for the case of silicon-based Raman lasers operating in the mid-infrared spectral domain. These loss terms contain besides linear losses also the three-photon absorption losses that occur in this type of lasers. We discuss the behavior of this three-photon absorption mechanism and its influence on both the Stokes and anti-Stokes output. Finally, we compare these emission characteristics with the corresponding simulation results for a near-infrared silicon-based Raman laser in which linear losses, two-photon absorption losses and free carrier absorption losses occur.Keywords
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