Charge neutrality in heavily doped emitters
- 1 September 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (5) , 435-436
- https://doi.org/10.1063/1.92764
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Revised model of asymmetric p-n junctionsApplied Physics Letters, 1979
- The effect of Auger recombination on the emitter injection efficiency of bipolar transistorsIEEE Transactions on Electron Devices, 1975
- Calculation of the emitter efficiency of bipolar transistorsIEEE Transactions on Electron Devices, 1973