Abstract
The glassy phase of Pd58.8 U20.6 Si20.6 alloys can be transformed into an icosahedral quasicrystalline phase by thermal annealing. Electrical transport properties of samples undergoing different degrees of glassy-to-icosahedral phase transformation have been measured. The icosahedral phase has an electrical resistivity of 220 μΩ cm at room temperature and a negative temperature coefficient of resistivity. The short electronic mean free path is discussed. At low temperature, the negative magnetoresistivity is attributed to magnetic scattering effects. The low-field ac susceptibility as a function of temperature exhibits a spin-glass-type transition which is not suppressed by a dc magnetic field.