Strain dependence of electronic bands of silicon
- 30 April 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 22 (1) , 21-23
- https://doi.org/10.1016/0038-1098(77)90934-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Dependence of the indirect energy gap of silicon on hydrostatic pressureSolid State Communications, 1975
- Pressure dependence of energy gaps and refractive indices of tetrahedrally bonded semiconductorsPhysical Review B, 1974
- Pressure coefficients for band gaps in siliconSolid State Communications, 1974
- Self-Consistent Pseudopotential for SiPhysical Review B, 1973
- Self-Consistent Electronic Structure of Solid SurfacesPhysical Review B, 1972
- Energy band structure of strained crystals: Pseudopotential calculations for Ge and Si with trial calculations for GaAs and CdTeJournal of Physics and Chemistry of Solids, 1971
- Self-Consistent Orthogonalized-Plane-Wave Energy-Band Study of SiliconPhysical Review B, 1970
- Strain-Split Energy Bands in Semiconductors: GePhysical Review B, 1969
- Internal strain in elastically strained germanium and siliconZeitschrift für Physik B Condensed Matter, 1965
- Deformation Potentials in Silicon. III. Effects of a General Strain on Conduction and Valence LevelsPhysical Review B, 1963